Samsung has officially announced that it is able to massively produce a new generation of V-NAND storage modules, reaching a record speed of 1.4 Gbit/s.
Samsung Electronics, the giant electronics division of the Korean giant, is launching the mass production of its fifth generation of 256 Gbit or 32GB storage modules of V-NAND type. Modules that will undoubtedly be found in the future high-end smartphones of the brand like the Galaxy S10, and whose speed would reach 1.4 Gbit / s, or 40% better than those of the fourth generation, according to Samsung.
Also according to the press release of the giant, the manufacturing process used is called ” Toggle DDR 4.0 ” and reduces the power consumption of modules from 1.8 to 1.2 volts, which is – in itself – huge, and improve read/write performance by 500 microseconds.
Inside each module, no less than 90 cell layers (3D Charge Trap Flash (CTF) cells) are stacked on top of each other in a pyramid. Samsung announces that, in all, 85 billion of these cells are present in the modules and that each can host up to 3 bits of data. To date, no other solution offers this type of performance and construction, Samsung is the first player in the industry to offer it.
The use of such modules on future smartphones would, among other things, further improve the benefits of these in a video. Filming in 4K at 60 frames per second requires fast storage solutions, to garner all information and limit the effects of micro cuts or slowdowns. With such bit rates and storage capacity, one can even imagine that some smartphone manufacturers will offer the ability to shoot in 8K or slow motion modes at several hundred frames per second.
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